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TCDT1100/TCDT1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output
FEATURES
* Isolation test voltage 5300 VRMS * Extra low coupling capacity - typical 0.2 pF * High common mode rejection
17201_1
NC 6
C 5
E 4
* No base terminal connection for improved noise immunity * CTR offered in 4 groups * Thickness though insulation 0.75 mm
V DE
1 A (+) 2 C (-) 3 NC
* Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
The TCDT1100/TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. The elements are mounted on one leadframe which providing a fixed distance between input and output for highest safety requirements.
APPLICATIONS
* Switch-mode power supplies * Line receiver * Computer peripheral interface * Microprocessor system interface * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5.
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: * DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements * IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) * VDE 0804 Telecommunication apparatus and data processing * IEC 60065 Safety for mains-operated household apparatus electronic and related
AGENCY APPROVALS
* UL1577, file no. E76222 system code A, double protection * BSI IEC 60950; IEC 60065 * DIN EN 60747-5-5 * FIMKO
ORDER INFORMATION
PART TCDT1100 TCDT1101 TCDT1102 TCDT1103 TCDT1100G TCDT1101G TCDT1102G TCDT1103G Note G = leadform 10.16 mm; G is not marked on the body. REMARKS CTR > 40 %, DIP-6 CTR 40 to 80 %, DIP-6 CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6 CTR > 40 %, DIP-6 CTR 40 to 80 %, DIP-6 CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83535 Rev. 1.6, 16-May-08
TCDT1100/TCDT1100G
Optocoupler, Phototransistor Output
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature (2)
(1)
TEST CONDITION
SYMBOL VR IF
VALUE 5 60 3 100 125 32 7 50 100 150 125 5300 250 - 55 to + 100 - 55 to + 125 260
UNIT V mA A mW C V V mA mA mW C VRMS mW C C C
tp 10 s
IFSM Pdiss Tj VCEO VECO IC
tp/T = 0.5, tp 10 ms
ICM Pdiss Tj VISO Ptot Tamb Tstg
2 mm from case, t 10 s
Tsld
Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector ermitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF IC = 1 mA IE = 100 A VCE = 20 V, IF = 0, E = 0 VCEO VECO ICEO 32 7 200 V V nA IF = 50 mA VR = 0, f = 1 MHz VF Cj 1.25 50 1.6 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83535 Rev. 1.6, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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TCDT1100/TCDT1100G
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART TCDT1100 TCDT1100G TCDT1101 IC/IF VCE = 5 V, IF = 10 mA TCDT1101G TCDT1102 TCDT1102G TCDT1103 TCDT1103G SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR MIN. 40 40 63 100 80 125 200 TYP. MAX. UNIT % % % % % % % %
Optocoupler, Phototransistor Output
MAXIMUM SAFETY RATINGS
PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM Tsi 6 150 kV C Pdiss 265 mW IF 130 mA TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INSULATION RATED PARAMETERS
PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb = 100 C VIO = 500 V, Tamb = 150 C (construction test only) SYMBOL Vpd VIOTM Vpd RIO RIO RIO MIN. 1.6 6 1.3 1012 1011 109 TYP. MAX. UNIT kV kV kV
Ptot - Total Power Dissipation (mW)
300 250 200 Phototransistor Psi (mW)
VIOTM t1, t2 t3 , t4 ttest tstres VPd = 1 to 10 s =1s = 10 s = 12 s
150 100 50 0 0 25 50 75 100 125 IR-diode Isi (mA)
VIOWM VIORM
0
t3 ttest t4 t1 tTr = 60 s t2 t stres t
150
13930
94 9182
Tsi - Safety Temperature (C)
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 Document Number: 83535 Rev. 1.6, 16-May-08
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TCDT1100/TCDT1100G
Optocoupler, Phototransistor Output
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time TEST CONDITION VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 , (see figure 3) VS = 5 V, IC = 10 mA, RL = 1 k, (see figure 4) VS = 5 V, IC = 10 mA, RL = 1 k, (see figure 4) SYMBOL td tr tf ts ton toff ton toff MIN. TYP. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 MAX. UNIT s s s s s s s s
IF
0
IF
IF
+5V IC = 5 mA; adjusted through input amplitude
0 IC 100 % 90 %
tp
t
RG = 50 tp = 0.01 T tp = 50 s
10 % 0
Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF
tp td tr t on (= t d + tr)
96 11698
tr td t on
Pulse duration Delay time Rise time Turn-on time
ts
tf t off
t
Storage time Fall time Turn-off time
ts tf t off (= ts + tf)
95 10900
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 5 - Switching Times
IF 0
IF = 10 mA
+5V IC
R G = 50 tp = 0.01 T t p = 50 s
Channel I Channel II 50 1 k Oscilloscope R L 1 M C L 20 pF
95 10843
Fig. 4 - Test Circuit, Saturated Operation
Document Number: 83535 Rev. 1.6, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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TCDT1100/TCDT1100G
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
Optocoupler, Phototransistor Output
Ptot - Total Power Dissipation (mW)
300 Coupled device 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode
10 000
ICEO - Collector Dark Current, with Open Base (nA)
1000
VCE = 20 V IF = 0
100
10
1 0
95 11026
25
50
75
100
96 11700
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
1000
100
IF - Forward Current (mA)
IC - Collector Current (mA)
IF = 50 mA
20 mA 10 mA
100
10
5 mA
10
2 mA 1 1 mA
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
0.1 0.1
95 11054
1
10
100
VF - Forward Voltage (V)
VCE - Collector Emitter Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Collector Current vs. Collector Emitter Voltage
CTRrel - Relative Current Transfer Ratio
1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80
1.0
VCEsat - Collector Emitter Saturation Voltage (V)
1.4
VCE = 5 V IF = 10 mA
0.8
0.6 CTR = 50 % used 0.4 0.2 0 1 10 20 % used 10 % used 100
96 11920
Tamb - Ambient Temperature (C)
95 11055
IC - Collector Current (mA)
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 11 - Collector Emitter Saturation Voltage vs. Collector Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83535 Rev. 1.6, 16-May-08
TCDT1100/TCDT1100G
Optocoupler, Phototransistor Output
Vishay Semiconductors
CTR - Current Transfer Ratio (%)
1000
Customer code/ identification/ option
VCE = 5 V 100
XXXXX XXXXX
Product code
V DE
VDE logo
10
UL logo
V XXXY 63
Plant code Package code Date code (year, week)
1 0.1 1 10 100
Vishay logo
17936
95 11057
IF - Forward Current (mA)
Fig. 12 - Current Transfer Ratio vs. Forward Current
Fig. 15 - Marking Example
ton/toff - Turn-on/Turn-off Time (s)
50 toff 40
30 ton 20 10 0 0 5 10 15 20 Saturated operation VS = 5 V RL = 1 k
95 11017
IF - Forward Current (mA)
Fig. 13 - Turn-on/off Time vs. Forward Current
ton/toff - Turn-on/Turn-off Time (s)
20 ton 15 Non-saturated operation VS = 5 V RL = 100
10
toff
5
0 0 2 4 6 8 10
95 11016
IC - Collector Current (mA)
Fig. 14 - Turn-on/off Time vs. Collector Current
Document Number: 83535 Rev. 1.6, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 781
TCDT1100/TCDT1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output
PACKAGE DIMENSIONS in millimeters
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min. 3.3 0.58 max. 1.54 2.54 nom. A 654 5.08 nom. Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
0.3 max.
9 0.6
0.4 B
technical drawings according to DIN specifications
14770
123
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min.
0.58 max. 1.54 2.54 nom. A 6 5 4 5.08 nom.
0.3 max. 10.16 0.2 0.4 B
Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board
technical drawings according to DIN specifications
123
14771
5.08 max.
3.3
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83535 Rev. 1.6, 16-May-08
TCDT1100/TCDT1100G
Optocoupler, Phototransistor Output
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83535 Rev. 1.6, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 783
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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